2SA1869-Y(JKT,Q,M)

Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 50V 3A TO220NIS

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Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 50V 3A TO220NIS

Technical Specifications

Parameters and characteristics for this part

Specification	2SA1869-Y(JKT,Q,M)

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	10 W
Supplier Device Package	TO-220NIS
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic [Max]	600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature	Power - Max [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic [Max]	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Frequency - Transition
Toshiba Semiconductor and Storage 2SA1869-Y,MTSAQ(J	TO-220NIS	50 V	150 °C	10 W	Through Hole	600 mV	3 A	1 µA	PNP	70	TO-220-3 Full Pack	100 MHz
Toshiba Semiconductor and Storage 2SA1869-Y(JKT,Q,M)	TO-220NIS	50 V	150 °C	10 W	Through Hole	600 mV	3 A	1 µA	PNP	70	TO-220-3 Full Pack	100 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 50 V 3 A 100MHz 10 W Through Hole TO-220NIS

Technical documentation and resources