DS28E02P-W13+1T

Obsolete

Analog Devices Inc./Maxim Integrated

IC EEPROM 1KBIT 1-WIRE 6TSOC

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DS28E02P-W13+1T

Obsolete

Analog Devices Inc./Maxim Integrated

IC EEPROM 1KBIT 1-WIRE 6TSOC

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DS28E02P-W13+1T

Access Time	2 µs
Memory Format	EEPROM
Memory Interface	1-Wire®
Memory Organization	256 x 4
Memory Size	128 B
Memory Type	Non-Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 C
Operating Temperature [Min]	-20 °C
Package / Case	6-SMD, J-Lead
Supplier Device Package	6-TSOC
Technology	EEPROM
Voltage - Supply [Max]	3.65 V
Voltage - Supply [Min]	1.75 V
Write Cycle Time - Word, Page	25 ms

DS28E02 Series

Part	Memory Size	Write Cycle Time - Word, Page	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Memory Format	Memory Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Memory Organization	Package / Case	Access Time	Technology	Supplier Device Package	Memory Interface
Analog Devices Inc./Maxim Integrated DS28E02P-W10+6T	128 B	25 ms	-20 °C	85 C	Surface Mount	EEPROM	Non-Volatile	3.65 V	1.75 V	256 x 4	6-SMD J-Lead	2 µs	EEPROM	6-TSOC	1-Wire®
Analog Devices Inc./Maxim Integrated DS28E02P-W10+9T	128 B	25 ms	-20 °C	85 C	Surface Mount	EEPROM	Non-Volatile	3.65 V	1.75 V	256 x 4	6-SMD J-Lead	2 µs	EEPROM	6-TSOC	1-Wire®
Analog Devices Inc./Maxim Integrated DS28E02P-W10+4	128 B	25 ms	-20 °C	85 C	Surface Mount	EEPROM	Non-Volatile	3.65 V	1.75 V	256 x 4	6-SMD J-Lead	2 µs	EEPROM	6-TSOC	1-Wire®
Analog Devices Inc./Maxim Integrated DS28E02Q-W01+2T	128 B	25 ms	-20 °C	85 C	Surface Mount	EEPROM	Non-Volatile	3.65 V	1.75 V	256 x 4		2 µs	EEPROM	6-TDFN (3x3)	1-Wire®
Analog Devices Inc./Maxim Integrated DS28E02P-W10+5	128 B	25 ms	-20 °C	85 C	Surface Mount	EEPROM	Non-Volatile	3.65 V	1.75 V	256 x 4	6-SMD J-Lead	2 µs	EEPROM	6-TSOC	1-Wire®
Analog Devices Inc./Maxim Integrated DS28E02P-W13+1T	128 B	25 ms	-20 °C	85 C	Surface Mount	EEPROM	Non-Volatile	3.65 V	1.75 V	256 x 4	6-SMD J-Lead	2 µs	EEPROM	6-TSOC	1-Wire®
Analog Devices Inc./Maxim Integrated DS28E02P-W10+2T	128 B	25 ms	-20 °C	85 C	Surface Mount	EEPROM	Non-Volatile	3.65 V	1.75 V	256 x 4	6-SMD J-Lead	2 µs	EEPROM	6-TSOC	1-Wire®
Analog Devices Inc./Maxim Integrated DS28E02P-W10+1	128 B	25 ms	-20 °C	85 C	Surface Mount	EEPROM	Non-Volatile	3.65 V	1.75 V	256 x 4	6-SMD J-Lead	2 µs	EEPROM	6-TSOC	1-Wire®
Analog Devices Inc./Maxim Integrated DS28E02P+	128 B	25 ms	-20 °C	85 C	Surface Mount	EEPROM	Non-Volatile	3.65 V	1.75 V	256 x 4	6-SMD J-Lead	2 µs	EEPROM	6-TSOC	1-Wire®
Analog Devices Inc./Maxim Integrated DS28E02Q-W01+4T	128 B	25 ms	-20 °C	85 C	Surface Mount	EEPROM	Non-Volatile	3.65 V	1.75 V	256 x 4		2 µs	EEPROM	6-TDFN (3x3)	1-Wire®

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

DS28E02 Series

EEPROM Memory IC 1Kbit 1-Wire® 2 µs 6-TSOC

Documents

Technical documentation and resources

No documents available