PJQ2800_R1_00001

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Panjit International Inc.

20V N-CHANNEL ENHANCEMENT MODE M

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Active

Panjit International Inc.

20V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ2800_R1_00001

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	5.2 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs [Max]	6.3 nC
Input Capacitance (Ciss) (Max) @ Vds	515 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-VDFN Exposed Pad
Power - Max [Max]	1.45 W
Supplier Device Package	DFN2020-6L
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	900 mV

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	Technology	Power - Max [Max]
Panjit International Inc. PJQ2800_R1_00001	DFN2020-6L	6.3 nC	515 pF	20 V	2 N-Channel (Dual)	-55 °C	150 °C	5.2 A	6-VDFN Exposed Pad	Surface Mount	900 mV	MOSFET (Metal Oxide)	1.45 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.87
	Digi-Reel®	1	$ 0.87
	Tape & Reel (TR)	3000	$ 0.16

General part information

Mosfet Array 20V 5.2A (Ta) 1.45W (Ta) Surface Mount DFN2020-6L

Technical documentation and resources