GBPC5010W

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GeneSiC Semiconductor

BRIDGE RECT 1P 1KV 50A GBPC-W

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GeneSiC Semiconductor

BRIDGE RECT 1P 1KV 50A GBPC-W

Technical Specifications

Parameters and characteristics for this part

Specification	GBPC5010W

Current - Average Rectified (Io)	50 A
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	GBPC-W, 4-Square
Supplier Device Package	GBPC-W
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.2 V
Voltage - Peak Reverse (Max) [Max]	1000 V

Part	Voltage - Peak Reverse (Max) [Max]	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Diode Type	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Mounting Type	Package / Case
GeneSiC Semiconductor GBPC5010W	1000 V	Standard	-55 °C	150 °C	Single Phase	GBPC-W	1.2 V	50 A	5 µA	Through Hole	4-Square GBPC-W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 1 kV Through Hole GBPC-W

Technical documentation and resources