RRH075P03TB1

NRND

Rohm Semiconductor

MOSFET P-CH 30V 7.5A 8SOP

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NRND

Rohm Semiconductor

MOSFET P-CH 30V 7.5A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	RRH075P03TB1

Current - Continuous Drain (Id) @ 25°C	7.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1900 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	650 mW
Rds On (Max) @ Id, Vgs	21 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Package / Case	Package / Case [y]	Package / Case [x]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Mounting Type	Power Dissipation (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C
Rohm Semiconductor RRH075P03TB1	2.5 V	21 mOhm	20 V	30 V	P-Channel	MOSFET (Metal Oxide)	4 V	10 V	8-SOIC	3.9 mm	0.154 in	1900 pF	150 °C	Surface Mount	650 mW	8-SOP	7.5 A

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General part information

P-Channel 30 V 7.5A (Ta) 650mW (Ta) Surface Mount 8-SOP

Technical documentation and resources

No documents available