2SC5459(TOJS,Q,M)

Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 400V 3A TO220NIS

Search across all available documentation for this part.

Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 400V 3A TO220NIS

Technical Specifications

Parameters and characteristics for this part

Specification	2SC5459(TOJS,Q,M)

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	2 W
Supplier Device Package	TO-220NIS
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max)	400 V

Part	Power - Max [Max]	Supplier Device Package	Mounting Type	Transistor Type	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Operating Temperature
Toshiba Semiconductor and Storage 2SC5459(TOJS,Q,M)	2 W	TO-220NIS	Through Hole	NPN	100 µA	1 V	400 V	3 A	20	TO-220-3 Full Pack	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 400 V 3 A 2 W Through Hole TO-220NIS

Technical documentation and resources