2SK2376(Q)

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 45A TO220FL

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Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 45A TO220FL

Technical Specifications

Parameters and characteristics for this part

Specification	2SK2376(Q)

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds	3350 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3, Short Tab
Power Dissipation (Max) [Max]	100 W
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	TO-220FL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Vgs (Max)	Power Dissipation (Max) [Max]	Package / Case	FET Type	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature
Toshiba Semiconductor and Storage 2SK2376(Q)	3350 pF	4 V	10 V	110 nC	MOSFET (Metal Oxide)	60 V	2 V	20 V	100 W	TO-220-3 Short Tab	N-Channel	Through Hole	45 A	17 mOhm	TO-220FL	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 45A (Ta) 100W (Tc) Through Hole TO-220FL

Technical documentation and resources