FII30-12E

Obsolete

IXYS

IGBT H BRIDGE 1200V 33A I4PAK5

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Obsolete

IXYS

IGBT H BRIDGE 1200V 33A I4PAK5

Technical Specifications

Parameters and characteristics for this part

Specification	FII30-12E

Configuration	Half Bridge
Current - Collector (Ic) (Max) [Max]	33 A
Current - Collector Cutoff (Max) [Max]	200 µA
IGBT Type	NPT
Input	Standard
Input Capacitance (Cies) @ Vce	1.2 nF
Mounting Type	Through Hole
NTC Thermistor	False
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	i4-Pac™-5
Power - Max [Max]	150 W
Supplier Device Package	ISOPLUS i4-PAC™
Vce(on) (Max) @ Vge, Ic	2.9 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Supplier Device Package	IGBT Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Configuration	Mounting Type	Power - Max [Max]	Input	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	NTC Thermistor	Input Capacitance (Cies) @ Vce	Vce(on) (Max) @ Vge, Ic	Current - Collector Cutoff (Max) [Max]
IXYS FII30-06D	ISOPLUS i4-PAC™	NPT	-55 °C	150 °C	30 A	Half Bridge	Through Hole	100 W	Standard	600 V	i4-Pac™-5		1.1 nF	2.4 V
IXYS FII30-12E	ISOPLUS i4-PAC™	NPT	-55 °C	150 °C	33 A	Half Bridge	Through Hole	150 W	Standard	1200 V	i4-Pac™-5		1.2 nF	2.9 V	200 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Array NPT Half Bridge 1200 V 33 A 150 W Through Hole ISOPLUS i4-PAC™

Technical documentation and resources