TJ60S06M3L(T6L1,NQ

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Toshiba Semiconductor and Storage

MOSFET P-CH 60V 60A DPAK

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Toshiba Semiconductor and Storage

MOSFET P-CH 60V 60A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	TJ60S06M3L(T6L1,NQ

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	156 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7760 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	100 W
Rds On (Max) @ Id, Vgs	11.2 mOhm
Supplier Device Package	DPAK+
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-20 V
Vgs(th) (Max) @ Id	3 V

Part	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Supplier Device Package	Vgs (Max) [Min]	Vgs (Max) [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Package / Case	Drain to Source Voltage (Vdss)	Technology
Toshiba Semiconductor and Storage TJ60S06M3L(T6L1,NQ	11.2 mOhm	7760 pF	Surface Mount	156 nC	100 W	DPAK+	-20 V	10 V	P-Channel	60 A	3 V	6 V 10 V	175 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 V	MOSFET (Metal Oxide)

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General part information

P-Channel 60 V 60A (Ta) 100W (Tc) Surface Mount DPAK+

Technical documentation and resources