BC849AW RFG

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Taiwan Semiconductor Corporation

TRANS NPN 30V 0.1A SOT323

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Taiwan Semiconductor Corporation

TRANS NPN 30V 0.1A SOT323

Technical Specifications

Parameters and characteristics for this part

Specification	BC849AW RFG

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	110
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-70, SOT-323
Power - Max [Max]	200 mW
Supplier Device Package	SOT-323
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case	Current - Collector Cutoff (Max) [Max]	Mounting Type
Taiwan Semiconductor Corporation BC849CW RFG	100 mA	200 mW	100 MHz	420	600 mV	30 V	NPN	-55 °C	150 °C	SOT-323	SC-70 SOT-323	100 nA	Surface Mount
Taiwan Semiconductor Corporation BC849AW RFG	100 mA	200 mW	100 MHz	110	600 mV	30 V	NPN	-55 °C	150 °C	SOT-323	SC-70 SOT-323	100 nA	Surface Mount
Taiwan Semiconductor Corporation BC849BW RFG	100 mA	200 mW	100 MHz	200	600 mV	30 V	NPN	-55 °C	150 °C	SOT-323	SC-70 SOT-323	100 nA	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 30 V 100 mA 100MHz 200 mW Surface Mount SOT-323

Technical documentation and resources