SS9011GBU

Obsolete

ON Semiconductor

TRANS NPN 30V 0.03A TO92-3

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Obsolete

ON Semiconductor

TRANS NPN 30V 0.03A TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	SS9011GBU

Current - Collector (Ic) (Max) [Max]	30 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	72
Frequency - Transition	2 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	400 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Package / Case	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Transistor Type	Frequency - Transition	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor SS9011HBU	TO-226-3 TO-92-3	150 °C	97	TO-92-3	30 V	100 nA	Through Hole	30 mA	NPN	2 MHz	400 mW	300 mV
ON Semiconductor SS9011HBU	TO-226-3 TO-92-3	150 °C	97	TO-92-3	30 V	100 nA	Through Hole	30 mA	NPN	2 MHz	400 mW	300 mV
ON Semiconductor SS9011GBU	TO-226-3 TO-92-3	150 °C	72	TO-92-3	30 V	100 nA	Through Hole	30 mA	NPN	2 MHz	400 mW	300 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 30 V 30 mA 2MHz 400 mW Through Hole TO-92-3

Technical documentation and resources