PJMP360N60EC_T0_00001

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Panjit International Inc.

600V SUPER JUNCTION MOSFET

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Panjit International Inc.

600V SUPER JUNCTION MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJMP360N60EC_T0_00001

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18.7 nC
Input Capacitance (Ciss) (Max) @ Vds	735 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	87.5 W
Rds On (Max) @ Id, Vgs	360 mOhm
Supplier Device Package	TO-220AB-L
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)
Panjit International Inc. PJMP360N60EC_T0_00001	Through Hole	11 A	87.5 W	MOSFET (Metal Oxide)	18.7 nC	735 pF	10 V	TO-220-3	360 mOhm	4 V	TO-220AB-L	N-Channel	-55 °C	150 °C	600 V	30 V

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General part information

N-Channel 600 V 11A (Tc) 87.5W (Tc) Through Hole TO-220AB-L

Technical documentation and resources