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SCT2450KEGC11Active
Rohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 10 A, 1.2 KV, 0.45 OHM, TO-247N
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θ<sub>JA</sub> and Ψ<sub>JT</sub>
Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules