DIODE MODULE GP 1KV 200A 3TOWER
| Part | Package / Case | Current - Reverse Leakage @ Vr | Speed | Speed | Supplier Device Package | Technology | Mounting Type | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Voltage - DC Reverse (Vr) (Max) [Max] | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Diode Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Three Tower | 10 çA | Standard Recovery >500ns | 200 mA | Three Tower | Standard | Chassis Mount | 200 A | 1.1 V | 1000 V | 150 °C | -55 °C | 1 Pair Series Connection |
GeneSiC Semiconductor | Three Tower | 10 µA | Standard Recovery >500ns | 200 mA | Three Tower | Standard | Chassis Mount | 200 A | 1.1 V | 600 V | 150 °C | -55 °C | 1 Pair Series Connection |
GeneSiC Semiconductor | Three Tower | 10 µA | Standard Recovery >500ns | 200 mA | Three Tower | Standard | Chassis Mount | 200 A | 1.1 V | 150 °C | -55 °C | 1 Pair Series Connection | |
GeneSiC Semiconductor | Three Tower | 10 µA | Standard Recovery >500ns | 200 mA | Three Tower | Standard | Chassis Mount | 200 A | 1.1 V | 1.2 kV | 150 °C | -55 °C | 1 Pair Series Connection |
GeneSiC Semiconductor | Three Tower | 10 µA | Standard Recovery >500ns | 200 mA | Three Tower | Standard | Chassis Mount | 200 A | 1.1 V | 1400 V | 150 °C | -55 °C | 1 Pair Series Connection |