IC DRAM 64MBIT PARALLEL 54VFBGA
| Part | Supplier Device Package | Clock Frequency | Mounting Type | Memory Type | Operating Temperature [Max] | Operating Temperature [Min] | Memory Interface | Write Cycle Time - Word, Page | Memory Size | Voltage - Supply [Max] | Voltage - Supply [Min] | Memory Organization | Access Time | Technology | Package / Case | Memory Format | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology Inc. | 54-VFBGA (8x8) | 133 MHz | Surface Mount | Volatile | 70 °C | 0 °C | Parallel | 15 ns | 64 Gbit | 3.6 V | 3 V | 4M x 16 | 5.4 ns | SDRAM | 54-VFBGA | DRAM | ||
Micron Technology Inc. | 54-TSOP II | 167 MHz | Surface Mount | Volatile | 85 °C | -40 °C | Parallel | 12 ns | 64 Gbit | 3.6 V | 3 V | 4M x 16 | 5.4 ns | SDRAM | DRAM | AEC-Q100 | Automotive | |
Micron Technology Inc. | 54-VFBGA (8x8) | 133 MHz | Surface Mount | Volatile | 85 °C | -40 °C | Parallel | 15 ns | 64 Gbit | 3.6 V | 3 V | 4M x 16 | 5.4 ns | SDRAM | 54-VFBGA | DRAM | ||
Micron Technology Inc. | 54-VFBGA (8x8) | 133 MHz | Surface Mount | Volatile | 70 °C | 0 °C | Parallel | 14 ns | 64 Gbit | 3.6 V | 3 V | 4M x 16 | 5.4 ns | SDRAM | 54-VFBGA | DRAM | ||
Micron Technology Inc. | 54-VFBGA (8x8) | 133 MHz | Surface Mount | Volatile | 70 °C | 0 °C | Parallel | 14 ns | 64 Gbit | 3.6 V | 3 V | 4M x 16 | 5.4 ns | SDRAM | 54-VFBGA | DRAM | ||
Micron Technology Inc. | 54-TSOP II | 167 MHz | Surface Mount | Volatile | 85 °C | -40 °C | Parallel | 12 ns | 64 Gbit | 3.6 V | 3 V | 4M x 16 | 5.5 ns | SDRAM | DRAM | |||
Micron Technology Inc. | 54-TSOP II | 167 MHz | Surface Mount | Volatile | 70 °C | 0 °C | Parallel | 12 ns | 64 Gbit | 3.6 V | 3 V | 4M x 16 | 5.5 ns | SDRAM | DRAM | |||
Micron Technology Inc. | 54-TSOP II | 133 MHz | Surface Mount | Volatile | 70 °C | 0 °C | Parallel | 14 ns | 64 Gbit | 3.6 V | 3 V | 4M x 16 | 5.4 ns | SDRAM | DRAM | |||
Micron Technology Inc. | 54-TSOP II | 133 MHz | Surface Mount | Volatile | 85 °C | -40 °C | Parallel | 15 ns | 64 Gbit | 3.6 V | 3 V | 4M x 16 | 5.4 ns | SDRAM | DRAM | |||
Micron Technology Inc. | 54-TSOP II | 143 MHz | Surface Mount | Volatile | 85 °C | -40 °C | Parallel | 14 ns | 64 Gbit | 3.6 V | 3 V | 4M x 16 | 5.4 ns | SDRAM | DRAM | AEC-Q100 | Automotive |