MOSFET N-CH 600V 1A IPAK/TP
| Part | Supplier Device Package | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Rds On (Max) @ Id, Vgs | FET Type | Operating Temperature | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | IPAK/TP | MOSFET (Metal Oxide) | 10 V | 30 V | 13 Ohm | N-Channel | 150 °C | 1 W 38 W | 1 A | Through Hole | 600 V | 65 pF | 3.8 nC | IPAK TO-251-3 Short Leads TO-251AA | ||
ON Semiconductor | IPAK/TP | MOSFET (Metal Oxide) | 10 V | 30 V | 2.4 Ohm | N-Channel | 150 °C | 1 W 26 W | 3 A | Through Hole | 250 V | 4.2 nC | IPAK TO-251-3 Short Leads TO-251AA | 4.5 V | 210 pF | |
ON Semiconductor | IPAK/TP | MOSFET (Metal Oxide) | 10 V | 30 V | 2.4 Ohm | N-Channel | 150 °C | 1 W 26 W | 3 A | Through Hole | 250 V | 4.2 nC | IPAK TO-251-3 Short Leads TO-251AA | 4.5 V | 210 pF | |
ON Semiconductor | IPAK/TP | MOSFET (Metal Oxide) | 10 V | 20 V | 28 mOhm | N-Channel | 150 °C | 1 W 23 W | 21 A | Through Hole | 40 V | 715 pF | 14.4 nC | IPAK TO-251-3 Short Leads TO-251AA |