P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Mounting Type | FET Type | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs [Max] | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | SOT-26 | -55 °C | 150 °C | MOSFET (Metal Oxide) | 100 V | 4 V | 1.3 A | Surface Mount | P-Channel | SOT-23-6 | 424 pF | 20 V | 6 V 10 V | 1.1 W | |||||
Diodes Inc | SOT-223-3 | -55 °C | 150 °C | MOSFET (Metal Oxide) | 100 V | 4 V | 1.7 A | Surface Mount | P-Channel | TO-261-4 TO-261AA | 424 pF | 20 V | 6 V 10 V | 2 W | 10.7 nC | ||||
Diodes Inc | TO-252-3 | -55 °C | 150 °C | MOSFET (Metal Oxide) | 100 V | 4 V | 3 A | Surface Mount | P-Channel | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 717 pF | 20 V | 6 V 10 V | 2.15 W | 16.5 nC | 235 mOhm | |||
Diodes Inc | TO-252-3 | -55 °C | 150 °C | MOSFET (Metal Oxide) | 100 V | 4 V | 3.8 A | Surface Mount | P-Channel | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 1055 pF | 20 V | 6 V 10 V | 2.17 W | 26.9 nC | 150 mOhm | |||
Diodes Inc | SOT-23-3 | -55 °C | 150 °C | MOSFET (Metal Oxide) | 100 V | 4 V | 600 mA | Surface Mount | P-Channel | SC-59 SOT-23-3 TO-236-3 | 141 pF | 20 V | 6 V 10 V | 625 mW | 3.5 nC | 1 Ohm |