IC DRAM 2GBIT PAR 96TWBGA
| Part | Voltage - Supply [Max] | Voltage - Supply [Min] | Package / Case | Technology | Memory Size | Memory Organization | Memory Type | Clock Frequency | Qualification | Mounting Type | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Access Time | Grade | Memory Format | Memory Interface | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | 1.575 V | 1.425 V | 96-TFBGA | SDRAM - DDR3 | 2 Gbit | 128 M | Volatile | 933 MHz | AEC-Q100 | Surface Mount | 96-TWBGA (9x13) | 95 °C | -40 °C | 20 ns | Automotive | DRAM | Parallel | 15 ns |
ISSI, Integrated Silicon Solution Inc | 1.575 V | 1.425 V | 96-TFBGA | SDRAM - DDR3 | 2 Gbit | 128 M | Volatile | 800 MHz | Surface Mount | 96-TWBGA (9x13) | 95 °C | 0 °C | 20 ns | DRAM | Parallel | 15 ns | ||
ISSI, Integrated Silicon Solution Inc | 1.575 V | 1.425 V | 96-TFBGA | SDRAM - DDR3 | 2 Gbit | 128 M | Volatile | 1066 MHz | AEC-Q100 | Surface Mount | 96-TWBGA (9x13) | 95 °C | 0 °C | 20 ns | Automotive | DRAM | Parallel | 15 ns |
ISSI, Integrated Silicon Solution Inc | 1.45 V | 1.283 V | 96-TFBGA | SDRAM - DDR3L | 2 Gbit | 128 M | Volatile | 800 MHz | Surface Mount | 96-TWBGA (9x13) | 95 °C | -40 °C | 20 ns | DRAM | Parallel | 15 ns | ||
ISSI, Integrated Silicon Solution Inc | 1.45 V | 1.283 V | 96-TFBGA | SDRAM - DDR3L | 2 Gbit | 128 M | Volatile | 800 MHz | AEC-Q100 | Surface Mount | 96-TWBGA (9x13) | 95 °C | -40 °C | 20 ns | Automotive | DRAM | Parallel | 15 ns |
ISSI, Integrated Silicon Solution Inc | 1.45 V | 1.283 V | 96-TFBGA | SDRAM - DDR3L | 2 Gbit | 128 M | Volatile | 667 MHz | Surface Mount | 96-TWBGA (9x13) | 95 °C | -40 °C | 20 ns | DRAM | Parallel | 15 ns | ||
ISSI, Integrated Silicon Solution Inc | 1.45 V | 1.283 V | 96-TFBGA | SDRAM - DDR3L | 2 Gbit | 128 M | Volatile | 800 MHz | Surface Mount | 96-TWBGA (9x13) | 95 °C | -40 °C | 20 ns | DRAM | Parallel | 15 ns | ||
ISSI, Integrated Silicon Solution Inc | 1.45 V | 1.283 V | 96-TFBGA | SDRAM - DDR3L | 2 Gbit | 128 M | Volatile | 933 MHz | Surface Mount | 96-TWBGA (9x13) | 95 °C | -40 °C | 20 ns | DRAM | Parallel | 15 ns | ||
ISSI, Integrated Silicon Solution Inc | 1.575 V | 1.425 V | 96-TFBGA | SDRAM - DDR3 | 2 Gbit | 128 M | Volatile | 1066 MHz | AEC-Q100 | Surface Mount | 96-TWBGA (9x13) | 95 °C | 0 °C | 20 ns | Automotive | DRAM | Parallel | 15 ns |
ISSI, Integrated Silicon Solution Inc | 1.575 V | 1.425 V | 96-TFBGA | SDRAM - DDR3 | 2 Gbit | 128 M | Volatile | 1066 MHz | AEC-Q100 | Surface Mount | 96-TWBGA (9x13) | 95 °C | 0 °C | 20 ns | Automotive | DRAM | Parallel | 15 ns |