2N6038 Series

4.0 A, 60 V NPN Darlington Bipolar Power Transistor

Catalog

4.0 A, 60 V NPN Darlington Bipolar Power Transistor

Part	Mounting Type	Supplier Device Package	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case
ON Semiconductor 2N6038	Through Hole	TO-126	40 W	4 A	150 °C	-65 °C	3 V	60 V	100 µA	750	TO-126-3 TO-225AA

4.0 A, 60 V NPN Darlington Bipolar Power Transistor

• High DC Current Gain -hFE= 2000 (Typ) @ IC= 2.0 Adc

• Collector-Emitter Sustaining Voltage - @ 100 mAdcVCEO(sus)= 60 Vdc (Min) - 2N6035, 2N6038VCEO(sus)= 80 Vdc (Min) - 2N6036, 2N6039

• Forward Biased Second Breakdown Current CapabilityIS/b= 1.5 Adc @ 25 Vdc

• Monolithic Construction with Built-in Base-EmitterResistors to Limit Leakage Multiplication

• Space-Saving High Performance-to-Cost RatioTO-225AA Plastic Package

• Pb-Free Packages are Available

The Power 4 A, 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.