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N-Channel Enhancement Mode MOSFET
Description
AI
This MOSFET features low on-resistance, fast switching and a high avalanche withstand capability, making it ideal for high efficiency power management applications.
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N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET
| Part | Current - Continuous Drain (Id) @ 25°C | FET Type | Technology | Supplier Device Package | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 1.5 A | N-Channel | MOSFET (Metal Oxide) | TO-252-3 | 2.5 V | 358 pF | 20 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 8.1 nC | Surface Mount | -55 °C | 150 °C | 10 V | 5 V | 200 V | 750 mOhm | 2.2 W |