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DIODE SIL CARB 650V 10A TO220ACP
| Part | Technology | Current - Reverse Leakage @ Vr | Operating Temperature - Junction [Max] | Mounting Type | Current - Average Rectified (Io) | Reverse Recovery Time (trr) | Package / Case | Supplier Device Package | Voltage - Forward (Vf) (Max) @ If | Speed | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | SiC (Silicon Carbide) Schottky | 50 µA | 175 °C | Through Hole | 10 A | 0 ns | TO-220-2 | TO-220ACP | 1.5 V | No Recovery Time | 500 pF | 650 V |