IC DRAM 256MBIT PAR 54TSOP II
| Part | Memory Organization | Mounting Type | Memory Type | Memory Interface | Voltage - Supply [Max] | Voltage - Supply [Min] | Memory Format | Clock Frequency | Write Cycle Time - Word, Page | Operating Temperature [Max] | Operating Temperature [Min] | Access Time | Memory Size | Technology | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology Inc. | 64 M | Surface Mount | Volatile | Parallel | 3.6 V | 3 V | DRAM | 133 MHz | 14 ns | 70 °C | 0 °C | 5.4 ns | 256 Gbit | SDRAM | 54-TSOP II |
Micron Technology Inc. | 64 M | Surface Mount | Volatile | Parallel | 3.6 V | 3 V | DRAM | 133 MHz | 15 ns | 70 °C | 0 °C | 5.4 ns | 256 Gbit | SDRAM | 54-TSOP II |
Micron Technology Inc. | 64 M | Surface Mount | Volatile | Parallel | 3.6 V | 3 V | DRAM | 167 MHz | 12 ns | 70 °C | 0 °C | 5.4 ns | 256 Gbit | SDRAM | 54-TSOP II |
Micron Technology Inc. | 64 M | Surface Mount | Volatile | Parallel | 3.6 V | 3 V | DRAM | 133 MHz | 15 ns | 70 °C | 0 °C | 5.4 ns | 256 Gbit | SDRAM | 54-TSOP II |
Micron Technology Inc. | 64 M | Surface Mount | Volatile | Parallel | 3.6 V | 3 V | DRAM | 167 MHz | 12 ns | 70 °C | 0 °C | 5.4 ns | 256 Gbit | SDRAM | 54-TSOP II |
Micron Technology Inc. | 64 M | Surface Mount | Volatile | Parallel | 3.6 V | 3 V | DRAM | 167 MHz | 12 ns | 70 °C | 0 °C | 5.4 ns | 256 Gbit | SDRAM | 54-TSOP II |
Micron Technology Inc. | 64 M | Surface Mount | Volatile | Parallel | 3.6 V | 3 V | DRAM | 133 MHz | 15 ns | 70 °C | 0 °C | 5.4 ns | 256 Gbit | SDRAM | 54-TSOP II |