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MOSFET N-CH 600V 20A 4DFN
| Part | Technology | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | FET Type | Drain to Source Voltage (Vdss) | Operating Temperature | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Vgs (Max) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | 1800 pF | 4.5 V | 55 nC | Surface Mount | 156 W | 20 A | N-Channel | 600 V | 150 °C | 190 mOhm | 10 V | 4-VSFN Exposed Pad | 30 V | 4-DFN-EP (8x8) | |
Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | 1680 pF | 3.7 V | Surface Mount | 156 W | 20 A | N-Channel | 600 V | 150 °C | 170 mOhm | 10 V | 4-VSFN Exposed Pad | 30 V | 4-DFN-EP (8x8) | 48 nC |