IC DRAM 1GBIT PARALLEL 60TWBGA
| Part | Clock Frequency | Technology | Memory Type | Memory Organization | Package / Case | Memory Format | Mounting Type | Memory Interface | Access Time | Write Cycle Time - Word, Page | Supplier Device Package | Voltage - Supply [Max] | Voltage - Supply [Min] | Operating Temperature [Max] | Operating Temperature [Min] | Memory Size |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | 333 MHz | SDRAM - DDR2 | Volatile | 128 M | 60-TFBGA | DRAM | Surface Mount | Parallel | 450 ps | 15 ns | 60-TWBGA (8x10.5) | 1.9 V | 1.7 V | 105 °C | -40 °C | 1 Mbit |
ISSI, Integrated Silicon Solution Inc | 333 MHz | SDRAM - DDR2 | Volatile | 128 M | 60-TFBGA | DRAM | Surface Mount | Parallel | 450 ps | 15 ns | 60-TWBGA (8x10.5) | 1.9 V | 1.7 V | 105 °C | -40 °C | 1 Mbit |
ISSI, Integrated Silicon Solution Inc | 333 MHz | SDRAM - DDR2 | Volatile | 128 M | 60-TFBGA | DRAM | Surface Mount | Parallel | 450 ps | 15 ns | 60-TWBGA (8x10.5) | 1.9 V | 1.7 V | 105 °C | -40 °C | 1 Mbit |
ISSI, Integrated Silicon Solution Inc | 400 MHz | SDRAM - DDR2 | Volatile | 128 M | 60-TFBGA | DRAM | Surface Mount | Parallel | 400 ps | 15 ns | 60-TWBGA (8x10.5) | 1.9 V | 1.7 V | 105 °C | -40 °C | 1 Mbit |
ISSI, Integrated Silicon Solution Inc | 400 MHz | SDRAM - DDR2 | Volatile | 128 M | 60-TFBGA | DRAM | Surface Mount | Parallel | 400 ps | 15 ns | 60-TWBGA (8x10.5) | 1.9 V | 1.7 V | 105 °C | -40 °C | 1 Mbit |