DIODE GEN PURP 50V 6A R-6
| Part | Package / Case | Mounting Type | Speed | Technology | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) | Reverse Recovery Time (trr) | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | R-6 Axial | Through Hole | 200 mA 500 ns | Standard | 1 V | 10 µA | 80 pF | 50 V | 6 A | 50 ns | 150 °C | -55 °C | R-6 |