Beta
⌘K
20V P-CHANNEL ENHANCEMENT MODE M
| Part | Technology | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Mounting Type | Vgs (Max) | Supplier Device Package | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Panjit International Inc. | MOSFET (Metal Oxide) | 1.8 V 4.5 V | 1785 pF | 18.9 nC | 7.2 A | 900 mV | Surface Mount | 8 V | DFN2020B-6 | 32 mOhm | 20 V | 2.8 W | -55 °C | 150 °C | P-Channel | ||
Panjit International Inc. | MOSFET (Metal Oxide) | 1.8 V 4.5 V | 1785 pF | 18.9 nC | 7.2 A | 900 mV | Surface Mount | 8 V | DFN2020B-6 | 32 mOhm | 20 V | 2.8 W | -55 °C | 150 °C | P-Channel | AEC-Q101 | Automotive |