MBRT600 Series

Catalog

DIODE SCHOTTKY 40V 600A 3-PIN THREE TOWER

Part	Mounting Type	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Diode Configuration	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io) (per Diode)	Speed	Package / Case	Current - Reverse Leakage @ Vr	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If [Max]
GeneSiC Semiconductor MBRT60040R	Chassis Mount	Schottky	40 V	150 °C	-55 °C	1 Pair Common Anode	750 mV	300 A	200 mA 500 ns	Three Tower	1 mA	Three Tower
GeneSiC Semiconductor MBRT60045	Chassis Mount	Schottky	45 V	150 °C	-55 °C	1 Pair Common Cathode	750 mV	300 A	200 mA 500 ns	Three Tower	1 mA	Three Tower
GeneSiC Semiconductor MBRT60040	Chassis Mount	Schottky	40 V	150 °C	-55 °C	1 Pair Common Cathode	750 mV	300 A	200 mA 500 ns	Three Tower	1 mA	Three Tower
GeneSiC Semiconductor MBRT60030	Chassis Mount	Schottky	30 V	150 °C	-55 °C	1 Pair Common Cathode	750 mV	300 A	200 mA 500 ns	Three Tower	1 mA	Three Tower
GeneSiC Semiconductor MBRT600100R	Chassis Mount	Schottky	100 V	150 °C	-55 °C	1 Pair Common Anode	880 mV	300 A	200 mA 500 ns	Three Tower	1 mA	Three Tower
GeneSiC Semiconductor MBRT60035L	Chassis Mount	Schottky	35 V	150 °C	-55 °C	1 Pair Common Cathode	600 mV	300 A	200 mA 500 ns	Three Tower	3 mA	Three Tower
GeneSiC Semiconductor MBRT60080R	Chassis Mount	Schottky	80 V	150 °C	-55 °C	1 Pair Common Anode	880 mV	300 A	200 mA 500 ns	Three Tower	1 mA	Three Tower
GeneSiC Semiconductor MBRT60020L	Chassis Mount	Schottky	20 V	150 °C	-55 °C	1 Pair Common Cathode		300 A	200 mA 500 ns	Three Tower	3 mA	Three Tower	580 mV
GeneSiC Semiconductor MBRT60035R	Chassis Mount	Schottky	35 V	150 °C	-55 °C	1 Pair Common Anode	750 mV	300 A	200 mA 500 ns	Three Tower	1 mA	Three Tower
GeneSiC Semiconductor MBRT60045RL	Chassis Mount	Schottky	45 V	150 °C	-55 °C	1 Pair Common Anode	600 mV	300 A	200 mA 500 ns	Three Tower	5 mA	Three Tower