Beta
⌘K
30V P-CHANNEL ENHANCEMENT MODE M
| Part | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Technology | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Drain to Source Voltage (Vdss) | Package / Case | Package / Case [y] | Package / Case [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Panjit International Inc. | 1.7 W | 1169 pF | MOSFET (Metal Oxide) | 8-SOP | 8.4 A | 20 mOhm | 11 nC | Surface Mount | P-Channel | -55 °C | 150 °C | 2.5 V | 4.5 V 10 V | 20 V | 30 V | 8-SOIC | 3.9 mm | 0.154 in |