MOSFET N-CH 100V 22A TO220SIS
| Part | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Vgs(th) (Max) @ Id | Package / Case | Technology | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature | Rds On (Max) @ Id, Vgs | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | Through Hole | 10 V | 22 A | 20 V | 4 V | TO-220-3 Full Pack | MOSFET (Metal Oxide) | N-Channel | 1800 pF | 100 V | 28 nC | 150 °C | 13.8 mOhm | TO-220SIS |