OPTOISOLATR 5KV TRANSISTOR 4-SMD
| Part | Vce Saturation (Max) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Voltage - Forward (Vf) (Typ) | Current Transfer Ratio (Min) [Min] | Package / Case | Current - Output / Channel | Input Type | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Mounting Type | Current Transfer Ratio (Max) | Voltage - Output (Max) [Max] | Number of Channels | Output Type | Current - DC Forward (If) (Max) [Max] | Turn On / Turn Off Time (Typ) | Supplier Device Package | Voltage - Isolation | Current Transfer Ratio (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 300 mV | -55 °C | 110 °C | 1.43 V | 200 % | 4-SMD Gull Wing | 50 mA | DC | 4.7 µs | 3 µs | Surface Mount | 400 % | 70 V | 1 | 1.81 mOhm | 60 mA | 5 µs 6 µs | 4-SMD | ||
Vishay General Semiconductor - Diodes Division | 400 mV | -55 °C | 110 °C | 1.35 V | 100 % | 4-DIP | 50 mA | DC | 3 µs | 3 µs | Through Hole | 200 % | 1 | 1.81 mOhm | 60 mA | 4 µs 6 µs | 4-DIP | 5300 Vrms | ||
Vishay General Semiconductor - Diodes Division | 300 mV | -55 °C | 110 °C | 1.43 V | 80 % | 4-DIP | 50 mA | DC | 4.7 µs | 3 µs | Through Hole | 70 V | 1 | 1.81 mOhm | 60 mA | 5 µs 6 µs | 4-DIP | 160 % | ||
Vishay General Semiconductor - Diodes Division | 300 mV | -55 °C | 110 °C | 1.43 V | 40 % | 4-DIP (0.300" 7.62mm) | 50 mA | DC | 4.7 µs | 3 µs | Through Hole | 80 % | 70 V | 1 | 1.81 mOhm | 60 mA | 5 µs 6 µs | 4-DIP | ||
Vishay General Semiconductor - Diodes Division | 300 mV | -55 °C | 110 °C | 1.43 V | 63 % | 4-DIP | 50 mA | DC | 4.7 µs | 3 µs | Through Hole | 125 % | 70 V | 1 | 1.81 mOhm | 60 mA | 5 µs 6 µs | 4-DIP | ||
Vishay General Semiconductor - Diodes Division | 300 mV | -55 °C | 110 °C | 1.43 V | 100 % | 4-SMD Gull Wing | 50 mA | DC | 4.7 µs | 3 µs | Surface Mount | 200 % | 70 V | 1 | 1.81 mOhm | 60 mA | 5 µs 6 µs | 4-SMD | ||
Vishay General Semiconductor - Diodes Division | 300 mV | -55 °C | 110 °C | 1.43 V | 50 % | 4-DIP | 50 mA | DC | 4.7 µs | 3 µs | Through Hole | 150 % | 70 V | 1 | 1.81 mOhm | 60 mA | 5 µs 6 µs | 4-DIP | ||
Vishay General Semiconductor - Diodes Division | 300 mV | -55 °C | 110 °C | 1.43 V | 100 % | 4-SMD Gull Wing | 50 mA | DC | 4.7 µs | 3 µs | Surface Mount | 300 % | 70 V | 1 | 1.81 mOhm | 60 mA | 5 µs 6 µs | 4-SMD | ||
Vishay General Semiconductor - Diodes Division | 300 mV | -55 °C | 110 °C | 1.43 V | 130 % | 4-SMD Gull Wing | 50 mA | DC | 4.7 µs | 3 µs | Surface Mount | 260 % | 70 V | 1 | 1.81 mOhm | 60 mA | 5 µs 6 µs | 4-SMD | ||
Vishay General Semiconductor - Diodes Division | 300 mV | -55 °C | 110 °C | 1.43 V | 100 % | 4-SMD Gull Wing | 50 mA | DC | 4.7 µs | 3 µs | Surface Mount | 200 % | 70 V | 1 | 1.81 mOhm | 60 mA | 5 µs 6 µs | 4-SMD |