IC DRAM 4GBIT HSUL 12 168VFBGA
| Part | Clock Frequency | Memory Interface | Write Cycle Time - Word, Page | Access Time | Package / Case | Memory Type | Memory Organization | Voltage - Supply [Min] | Voltage - Supply [Max] | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Memory Size | Memory Format | Grade | Qualification | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | 400 MHz | HSUL_12 | 15 ns | 5.5 ns | 168-VFBGA | Volatile | 256 M | 1.14 V 1.7 V | 1.3 V 1.95 V | Surface Mount | -40 °C | 85 °C | 168-VFBGA (12x12) | 512 kb | DRAM | |||
ISSI, Integrated Silicon Solution Inc | 533 MHz | HSUL_12 | 15 ns | 5.5 ns | 168-VFBGA | Volatile | 256 M | 1.14 V 1.7 V | 1.3 V 1.95 V | Surface Mount | -40 °C | 85 °C | 168-VFBGA (12x12) | 512 kb | DRAM | |||
ISSI, Integrated Silicon Solution Inc | 533 MHz | HSUL_12 | 15 ns | 5.5 ns | 168-VFBGA | Volatile | 256 M | 1.14 V 1.7 V | 1.3 V 1.95 V | Surface Mount | -40 °C | 85 °C | 168-VFBGA (12x12) | 512 kb | DRAM | Automotive | AEC-Q100 | SDRAM - Mobile LPDDR2 |
ISSI, Integrated Silicon Solution Inc | 400 MHz | HSUL_12 | 15 ns | 5.5 ns | 168-VFBGA | Volatile | 256 M | 1.14 V 1.7 V | 1.3 V 1.95 V | Surface Mount | -40 °C | 85 °C | 168-VFBGA (12x12) | 512 kb | DRAM | |||
ISSI, Integrated Silicon Solution Inc | 533 MHz | HSUL_12 | 15 ns | 5.5 ns | 168-VFBGA | Volatile | 256 M | 1.14 V 1.7 V | 1.3 V 1.95 V | Surface Mount | -40 °C | 85 °C | 168-VFBGA (12x12) | 512 kb | DRAM | |||
ISSI, Integrated Silicon Solution Inc | 533 MHz | HSUL_12 | 15 ns | 5.5 ns | 134-TFBGA | Volatile | 256 M | 1.14 V 1.7 V | 1.3 V 1.95 V | Surface Mount | -40 °C | 85 °C | 134-TFBGA (10x11.5) | 512 kb | DRAM | SDRAM - Mobile LPDDR2 |