MBR40035 Series

Catalog

DIODE MOD SCHOTT 35V 200A 2TOWER

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Speed	Technology	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Diode Configuration	Current - Reverse Leakage @ Vr	Package / Case	Current - Average Rectified (Io) (per Diode)
GeneSiC Semiconductor MBR40035CTRL	35 V	600 mV	Twin Tower	200 mA 500 ns	Schottky	Chassis Mount	150 °C	-55 °C	1 Pair Common Anode	3 mA	Twin Tower	200 A
GeneSiC Semiconductor MBR40035CT	35 V	700 mV	Twin Tower	200 mA 500 ns	Schottky	Chassis Mount	150 °C	-55 °C	1 Pair Common Cathode	1 mA	Twin Tower	200 A
GeneSiC Semiconductor MBR40035CTL	35 V	600 mV	Twin Tower	200 mA 500 ns	Schottky	Chassis Mount	150 °C	-55 °C	1 Pair Common Cathode	3 mA	Twin Tower	200 A