100V N-CHANNEL MOSFET
| Part | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Drain to Source Voltage (Vdss) | Technology | Package / Case | Supplier Device Package | Rds On (Max) @ Id, Vgs | FET Type | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Panjit International Inc. | 2 W 34.7 W | 6 V 10 V | Surface Mount | 100 V | MOSFET (Metal Oxide) | DPAK (2 Leads + Tab) SC-63 TO-252-3 | TO-252AA | 130 mOhm | N-Channel | 2.6 A 34.7 A | -55 °C | 150 °C | 12 nC | 25 V | 707 pF | 3.5 V |