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MOSFET N-CH 450V 19A TO220SIS
| Part | Operating Temperature | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Supplier Device Package | Technology | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | FET Type | Package / Case | Vgs (Max) | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 150 °C | 45 nC | Through Hole | TO-220SIS | MOSFET (Metal Oxide) | 10 V | 250 mOhm | 19 A | N-Channel | TO-220-3 Full Pack | 30 V | 50 W | 450 V | 2600 pF |