2N5883 Series

25 A, 60 V PNP Bipolar Power Transistor

Catalog

25 A, 60 V PNP Bipolar Power Transistor

Part	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Power - Max [Max]	Mounting Type	Current - Collector Cutoff (Max)	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Supplier Device Package	Transistor Type	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor 2N5883G	4 V	60 V	TO-204AA TO-3	200 W	Through Hole	2 mA	25 A	TO-204	TO-3	PNP	4 MHz	20 hFE

25 A, 60 V PNP Bipolar Power Transistor

• Low Collector-Emitter Saturation VoltageVCE(sat)= 1.0 Vdc, (max) at IC= 15 Adc

• Low Leakage CurrentICEX= 1.0 mAdc (max) at Rated Voltage

• Excellent DC Current GainhFE= 20 (min) at IC= 10 Adc

• High Current Gain Bandwidth Productft= 4.0 MHz (min) at IC= 1.0 Adc

• Pb-Free Packages are Available

The Power 25A 80 V Bipolar NPN Transistor is designed for general-purpose power amplifier and switching applications.