UCC21736-Q1 Series

Automotive 5.7kVrms, ±10A isolated single-channel gate driver with active short circuit for IGBT/SiC

Catalog

Automotive 5.7kVrms, ±10A isolated single-channel gate driver with active short circuit for IGBT/SiC

Part	Voltage - Isolation	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Rise / Fall Time (Typ) [Max]	Rise / Fall Time (Typ)	Grade	Qualification	Common Mode Transient Immunity (Min) [Min]	Package / Case [x]	Package / Case	Package / Case [y]	Technology	Approval Agency	Mounting Type	Propagation Delay tpLH / tpHL (Max) [Max]	Current - Peak Output	Pulse Width Distortion (Max) [Max]	Number of Channels	Current - Output High, Low [custom]	Current - Output High, Low [custom]	Voltage - Output Supply [Max]	Voltage - Output Supply [Min]	Propagation Delay tpLH / tpHL (Max) [custom]	Propagation Delay tpLH / tpHL (Max) [custom]
Texas Instruments UCC21736QDWRQ1	5700 Vrms	125 °C	-40 °C	16-SOIC	24 ns	28 ns	Automotive	AEC-Q100	150 kV/µs	0.295 in	16-SOIC	7.5 mm	Capacitive Coupling	UL VDE	Surface Mount	130 ns	10 A	30 ns	1	10 A	10 A	33 V	13 V
Texas Instruments UCC21736QDWQ1	5700 Vrms	125 °C	-40 °C	16-SOIC	24 ns	28 ns	Automotive	AEC-Q100	150 kV/µs	0.295 in	16-SOIC	7.5 mm	Capacitive Coupling	UL VDE	Surface Mount		10 A	25 ns	1	10 A	10 A	33 V	13 V	90 ns	90 ns

Catalog

Automotive 5.7kVrms, ±10A isolated single-channel gate driver with active short circuit for IGBT/SiC

Key Features

• 5.7-kVRMSsingle channel isolated gate driverAEC-Q100 qualified for automotive applicationsSiC MOSFETs and IGBTs up to 2121 Vpk33-V maximum output drive voltage (VDD-VEE)±10-A drive strength and split output150-V/ns minimum CMTI270-ns response time fast overcurrent protectionExternal active miller clamp900-mA soft turn-off when fault happensASC input on isolated side to turn on power switch during system faultAlarmFLTon over current and reset fromRST/ENFast enable/disable response onRST/ENReject <40-ns noise transient and pulse on input pins12V VDD UVLO and -3V VEE UVLO with power good on RDYInputs/outputs with over/under-shoot transient voltage Immunity up to 5 V130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skewSOIC-16 DW package with creepage and clearance distance > 8 mmOperating junction temperature –40°C to 150°C5.7-kVRMSsingle channel isolated gate driverAEC-Q100 qualified for automotive applicationsSiC MOSFETs and IGBTs up to 2121 Vpk33-V maximum output drive voltage (VDD-VEE)±10-A drive strength and split output150-V/ns minimum CMTI270-ns response time fast overcurrent protectionExternal active miller clamp900-mA soft turn-off when fault happensASC input on isolated side to turn on power switch during system faultAlarmFLTon over current and reset fromRST/ENFast enable/disable response onRST/ENReject <40-ns noise transient and pulse on input pins12V VDD UVLO and -3V VEE UVLO with power good on RDYInputs/outputs with over/under-shoot transient voltage Immunity up to 5 V130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skewSOIC-16 DW package with creepage and clearance distance > 8 mmOperating junction temperature –40°C to 150°C

Description

The UCC21736-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21736-Q1 has up to ±10-A peak source and sink current. The input side is isolated from the output side with SiO2capacitive isolation technology, supporting up to 1.5-kVRMSworking voltage, 12.8-kVPKsurge immunity with longer than 40 years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI). The UCC21736-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The ASC feature can be utilized to force ON power switch during system failure events, further increasing the drivers’ versatility and simplifying the system design effort, size and cost. The UCC21736-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21736-Q1 has up to ±10-A peak source and sink current. The input side is isolated from the output side with SiO2capacitive isolation technology, supporting up to 1.5-kVRMSworking voltage, 12.8-kVPKsurge immunity with longer than 40 years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI). The UCC21736-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The ASC feature can be utilized to force ON power switch during system failure events, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.