2SCR567F3 Series

Small and Excellent Thermal Conductivity, NPN 2.5A 120V Middle Power Transistor

Catalog

Small and Excellent Thermal Conductivity, NPN 2.5A 120V Middle Power Transistor

Part	Current - Collector (Ic) (Max) [Max]	Transistor Type	Operating Temperature	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce	Mounting Type	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]
Rohm Semiconductor 2SCR567F3TR	2.5 A	NPN	150 °C	200 mV	HUML2020L3	120 hFE	Surface Mount	1 W	1 µA	3-UDFN Exposed Pad	120 V

Catalog

Small and Excellent Thermal Conductivity, NPN 2.5A 120V Middle Power Transistor

Key Features

• Suitable for Middle Power Driver., Low VCE(sat)VCE(sat)=200mV (Max.). (IC/IB=800mA/80mA), High collector current. IC=2.5A (max), ICP=5A (max), Leadless small SMD package (HUML2020L3) Excellent thermal and electrical conductivity.

Description

2SCR567F3 is a middle power transistor with Low VCE(sat), suitable for low frequency amplifier. HUML2020L3 (DFN2020-3S) is a small leadless surface mount package with excellent thermal and electrical conductivity.