DIODE GEN PURP 150V 600MA TS-1
| Part | Technology | Supplier Device Package | Reverse Recovery Time (trr) | Current - Average Rectified (Io) | Package / Case | Capacitance @ Vr, F | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Mounting Type | Voltage - Forward (Vf) (Max) @ If | Speed | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) [Max] | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | Standard | TS-1 | 15 ns | 600 mA | T-18 Axial | 9 pF | 150 °C | -55 °C | Through Hole | 950 mV | 200 mA 500 ns | 5 µA | |||
Taiwan Semiconductor Corporation | Standard | TS-1 | 15 ns | 600 mA | T-18 Axial | 9 pF | 150 °C | -55 °C | Through Hole | 950 mV | 200 mA 500 ns | 5 µA | 100 V | AEC-Q101 | Automotive |
Taiwan Semiconductor Corporation | Standard | TS-1 | 15 ns | 600 mA | T-18 Axial | 9 pF | 150 °C | -55 °C | Through Hole | 950 mV | 200 mA 500 ns | 5 µA | AEC-Q101 | Automotive | |
Taiwan Semiconductor Corporation | Standard | TS-1 | 15 ns | 600 mA | T-18 Axial | 9 pF | 150 °C | -55 °C | Through Hole | 950 mV | 200 mA 500 ns | 5 µA | 50 V | ||
Taiwan Semiconductor Corporation | Standard | TS-1 | 15 ns | 600 mA | T-18 Axial | 9 pF | 150 °C | -55 °C | Through Hole | 950 mV | 200 mA 500 ns | 5 µA | 200 V | AEC-Q101 | Automotive |
Taiwan Semiconductor Corporation | Standard | TS-1 | 15 ns | 600 mA | T-18 Axial | 9 pF | 150 °C | -55 °C | Through Hole | 950 mV | 200 mA 500 ns | 5 µA | 100 V | AEC-Q101 | Automotive |
Taiwan Semiconductor Corporation | Standard | TS-1 | 15 ns | 600 mA | T-18 Axial | 9 pF | 150 °C | -55 °C | Through Hole | 950 mV | 200 mA 500 ns | 5 µA | 200 V |