Beta
⌘K
MOSFET N-CH 650V 17.3A TO220
| Part | Technology | FET Type | Rds On (Max) @ Id, Vgs | Vgs (Max) | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] | Package / Case | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Vgs(th) (Max) @ Id | Operating Temperature | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | N-Channel | 200 mOhm | 30 V | 650 V | 1800 pF | 10 V | 165 W | TO-220-3 | Through Hole | 17.3 A | TO-220 | 3.5 V | 150 °C | 45 nC |