DIODE MODULE GP 600V 250A 3TOWER
| Part | Reverse Recovery Time (trr) | Voltage - Forward (Vf) (Max) @ If | Mounting Type | Diode Configuration | Current - Average Rectified (Io) (per Diode) | Technology | Speed | Package / Case | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Speed |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 250 ns | 1.7 V | Chassis Mount | 1 Pair Common Anode | 250 A | Standard | 200 mA 500 ns | Three Tower | 150 °C | -55 °C | Three Tower | 600 V | |
GeneSiC Semiconductor | 150 ns | 1.5 V | Chassis Mount | 1 Pair Common Cathode | 250 A | Standard | 200 mA 500 ns | Three Tower | 150 °C | -55 °C | Three Tower | 400 V | |
GeneSiC Semiconductor | 150 ns | 1.3 V | Chassis Mount | 1 Pair Common Cathode | 250 A | Standard | 200 mA 500 ns | Three Tower | 150 °C | -55 °C | Three Tower | 200 V | |
GeneSiC Semiconductor | 150 ns | 1.5 V | Chassis Mount | 1 Pair Common Anode | 250 A | Standard | 200 mA 500 ns | Three Tower | 150 °C | -55 °C | Three Tower | 400 V | |
GeneSiC Semiconductor | 2.6 V | Chassis Mount | 1 Pair Common Anode | 250 A | Standard | 200 mA | Three Tower | 150 °C | -55 °C | Three Tower | 1.2 kV | Standard Recovery >500ns | |
GeneSiC Semiconductor | 250 ns | 1.7 V | Chassis Mount | 1 Pair Common Cathode | 250 A | Standard | 200 mA 500 ns | Three Tower | 150 °C | -55 °C | Three Tower | 600 V |