IC DRAM 256MBIT PAR 86TSOP II
| Part | Memory Format | Supplier Device Package | Write Cycle Time - Word, Page | Operating Temperature [Max] | Operating Temperature [Min] | Clock Frequency | Mounting Type | Memory Interface | Technology | Voltage - Supply [Max] | Voltage - Supply [Min] | Memory Type | Memory Organization | Package / Case | Package / Case [custom] | Memory Size | Access Time |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology Inc. | DRAM | 86-TSOP II | 14 ns | 85 °C | -40 °C | 143 MHz | Surface Mount | Parallel | SDRAM | 3.6 V | 3 V | Volatile | 8M x 32 | 86-TFSOP | 0.4 in | 256 Gbit | 6 ns |
Micron Technology Inc. | DRAM | 90-VFBGA (8x13) | 14 ns | 70 °C | 0 °C | 143 MHz | Surface Mount | Parallel | SDRAM | 3.6 V | 3 V | Volatile | 8M x 32 | 90-VFBGA | 256 Gbit | 6 ns | |
Micron Technology Inc. | DRAM | 86-TSOP II | 12 ns | 70 °C | 0 °C | 166 MHz | Surface Mount | Parallel | SDRAM | 3.6 V | 3 V | Volatile | 8M x 32 | 86-TFSOP | 0.4 in | 256 Gbit | 5.5 ns |
Micron Technology Inc. | DRAM | 86-TSOP II | 12 ns | 70 °C | 0 °C | 166 MHz | Surface Mount | Parallel | SDRAM | 3.6 V | 3 V | Volatile | 8M x 32 | 86-TFSOP | 0.4 in | 256 Gbit | 5.5 ns |
Micron Technology Inc. | DRAM | 86-TSOP II | 14 ns | 70 °C | 0 °C | 143 MHz | Surface Mount | Parallel | SDRAM | 3.6 V | 3 V | Volatile | 8M x 32 | 86-TFSOP | 0.4 in | 256 Gbit | 6 ns |