UCC5304 Series

5kVrms, 4A/6A single-channel isolated gate driver with 5V UVLO for GaNFETs & MOSFETs

Catalog

5kVrms, 4A/6A single-channel isolated gate driver with 5V UVLO for GaNFETs & MOSFETs

Part	Utilized IC / Part	Contents	Function	Secondary Attributes	Supplied Contents	Type	Propagation Delay tpLH / tpHL (Max)	Mounting Type	Approval Agency	Supplier Device Package	Pulse Width Distortion (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Current - Output High, Low	Number of Channels	Grade	Common Mode Transient Immunity (Min) [Min]	Current - Peak Output	Package / Case	Package / Case [custom]	Package / Case [custom]	Voltage - Output Supply [Max]	Voltage - Output Supply [Min]	Qualification	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Technology
Texas Instruments UCC5304EVM-035	UCC5304	Board(s)	Gate Driver	On-Board Test Points	Board(s)	Power Management
Texas Instruments UCC5304DWVR							40 ns	Surface Mount	CQC UL VDE	8-SOIC	5.5 ns	125 °C	-40 °C	4 A 6 A	1	Automotive	100 V/ns	4 A 6 A	8-SOIC	0.295 in	7.5 mm	18 V	6 V	AEC-Q100	5 ns	6 ns	Capacitive Coupling

Catalog

5kVrms, 4A/6A single-channel isolated gate driver with 5V UVLO for GaNFETs & MOSFETs

Key Features

• Reinforced isolationSingle channel in DWV Package with 8.5-mm creepage distanceCMTI greater than 100-V/ns4-A peak source, 6-A peak sink outputSwitching parameters:40-ns maximum propagation delay5-ns maximum delay matching5.5-ns maximum pulse-width distortion35-µs maximum VDD power-up delayUp to 18-V VDD output drive supply5-V VDD UVLOOperating temp. range (TA) –40°C to 125°CRejects input pulses shorter than 5-nsTTL and CMOS compatible inputsReinforced isolationSingle channel in DWV Package with 8.5-mm creepage distanceCMTI greater than 100-V/ns4-A peak source, 6-A peak sink outputSwitching parameters:40-ns maximum propagation delay5-ns maximum delay matching5.5-ns maximum pulse-width distortion35-µs maximum VDD power-up delayUp to 18-V VDD output drive supply5-V VDD UVLOOperating temp. range (TA) –40°C to 125°CRejects input pulses shorter than 5-nsTTL and CMOS compatible inputs

Description

The UCC5304 device is an isolated single-channel gate driver with 4-A peak-source and 6-A peak-sink current. It is designed to drive power MOSFETs and GaNFETs in PFC, Isolated AC/DC, DC/DC, and synchronous rectification applications, with fast switching performance and robust ground bounce protection through greater than 100-V/ns common-mode transient immunity (CMTI). The UCC5304 is available in a 8.5 mm SOIC-8 (DWV) package and can support isolation voltage up to 5-kVRMS. Compared to an optocoupler, the UCC5304 family has lower part-to-part skew, lower propagation delay, higher operating temperature, and higher CMTI. Protection features include: IN pin rejects input transient shorter than 5-ns; both input and output can withstand –2-V spikes for 200-ns, both supplies have undervoltage lockout (UVLO), and active pull down protection clamps the output below 2.1-V when unpowered or floated. With these features, this device enables high efficiency, high power density, and robustness in a wide variety of power applications. The UCC5304 device is an isolated single-channel gate driver with 4-A peak-source and 6-A peak-sink current. It is designed to drive power MOSFETs and GaNFETs in PFC, Isolated AC/DC, DC/DC, and synchronous rectification applications, with fast switching performance and robust ground bounce protection through greater than 100-V/ns common-mode transient immunity (CMTI). The UCC5304 is available in a 8.5 mm SOIC-8 (DWV) package and can support isolation voltage up to 5-kVRMS. Compared to an optocoupler, the UCC5304 family has lower part-to-part skew, lower propagation delay, higher operating temperature, and higher CMTI. Protection features include: IN pin rejects input transient shorter than 5-ns; both input and output can withstand –2-V spikes for 200-ns, both supplies have undervoltage lockout (UVLO), and active pull down protection clamps the output below 2.1-V when unpowered or floated. With these features, this device enables high efficiency, high power density, and robustness in a wide variety of power applications.