MOSFET N-CH 600V 50A TO3P
| Part | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) [Max] | Mounting Type | Vgs (Max) | Vgs(th) (Max) @ Id | Package / Case | Technology | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | TO-3P | 4660 pF | -55 °C | 150 °C | 50 A | 660 W | Through Hole | 30 V | 4.5 V | SC-65-3 TO-3P-3 | MOSFET (Metal Oxide) | 10 V | 600 V | 116 nC | N-Channel | 73 mOhm | ||
IXYS | TO-3P | 4335 pF | -55 °C | 150 °C | 50 A | Through Hole | 30 V | 5 V | SC-65-3 TO-3P-3 | MOSFET (Metal Oxide) | 10 V | 500 V | N-Channel | 120 mOhm | 85 nC | 960 W |