Beta
⌘K
30V P-CHANNEL ENHANCEMENT MODE M
| Part | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Package / Case | Package / Case [y] | Package / Case [x] | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Panjit International Inc. | 30 V | 2.5 V | 1.7 W | 15.5 mOhm | MOSFET (Metal Oxide) | -55 °C | 150 °C | 1556 pF | 4.5 V 10 V | 20 V | 8-SOIC | 3.9 mm | 0.154 in | 10 A | 8-SOP | P-Channel | 14 nC | Surface Mount |