MOSFET N-CH 500V 2.4A TO252
| Part | Power Dissipation (Max) [Max] | Technology | Supplier Device Package | Drain to Source Voltage (Vdss) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Vgs (Max) | Vgs(th) (Max) @ Id | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 55 W | MOSFET (Metal Oxide) | TO-252AA | 500 V | Surface Mount | 240 pF | 6.1 nC | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 2.4 A | 10 V | 3.75 Ohm | -55 °C | 150 °C | N-Channel | 30 V | 5.5 V | |
IXYS | MOSFET (Metal Oxide) | TO-252AA | 800 V | Surface Mount | 440 pF | 10.6 nC | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 2 A | 10 V | 6 Ohm | -55 °C | 150 °C | N-Channel | 30 V | 5.5 V | 70 W |