2SA965 Series

Catalog

TRANS PNP 120V 0.8A TO92MOD

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Power - Max [Max]
Toshiba Semiconductor and Storage 2SA965-Y(F,M)	80	150 °C	TO-226-3 TO-92-3 Long Body	120 V	Through Hole	PNP	1 V	800 mA	120 MHz	100 nA	TO-92MOD	900 mW
Toshiba Semiconductor and Storage 2SA965-Y(T6CANO,FM	80	150 °C	TO-226-3 TO-92-3 Long Body	120 V	Through Hole	PNP	1 V	800 mA	120 MHz	100 nA	TO-92MOD	900 mW