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DIODE MODULE GP 200V 200A 2TOWER
| Part | Speed | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Supplier Device Package | Technology | Diode Configuration | Package / Case | Reverse Recovery Time (trr) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Mounting Type | Voltage - DC Reverse (Vr) (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 200 mA 500 ns | 150 °C | -55 °C | Twin Tower | Standard | 1 Pair Common Cathode | Twin Tower | 90 ns | 200 A | 1.3 V | Chassis Mount | 200 V |