IC DRAM 128MBIT PAR 66TSOP II
| Part | Memory Type | Write Cycle Time - Word, Page | Memory Interface | Access Time | Memory Organization | Memory Size | Voltage - Supply [Max] | Voltage - Supply [Min] | Clock Frequency | Package / Case [custom] | Package / Case | Package / Case [custom] | Memory Format | Supplier Device Package | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | Volatile | 12 ns | Parallel | 700 ps | 8M x 16 | 128 Mb | 2.7 V | 2.3 V | 166 MHz | 0.4 in | 66-TSSOP | 0.4 in | DRAM | 66-TSOP II | Surface Mount | 85 °C | -40 °C |
ISSI, Integrated Silicon Solution Inc | Volatile | 15 ns | Parallel | 700 ps | 8M x 16 | 128 Mb | 2.7 V | 2.3 V | 200 MHz | 0.4 in | 66-TSSOP | 0.4 in | DRAM | 66-TSOP II | Surface Mount | 70 °C | 0 °C |
ISSI, Integrated Silicon Solution Inc | Volatile | 15 ns | Parallel | 700 ps | 8M x 16 | 128 Mb | 2.7 V | 2.3 V | 200 MHz | 0.4 in | 66-TSSOP | 0.4 in | DRAM | 66-TSOP II | Surface Mount | 85 °C | -40 °C |
ISSI, Integrated Silicon Solution Inc | Volatile | 12 ns | Parallel | 700 ps | 8M x 16 | 128 Mb | 2.7 V | 2.3 V | 166 MHz | 0.4 in | 66-TSSOP | 0.4 in | DRAM | 66-TSOP II | Surface Mount | 70 °C | 0 °C |
ISSI, Integrated Silicon Solution Inc | Volatile | 15 ns | Parallel | 700 ps | 8M x 16 | 128 Mb | 2.7 V | 2.3 V | 200 MHz | 0.4 in | 66-TSSOP | 0.4 in | DRAM | 66-TSOP II | Surface Mount | 70 °C | 0 °C |
ISSI, Integrated Silicon Solution Inc | Volatile | 15 ns | Parallel | 700 ps | 8M x 16 | 128 Mb | 2.7 V | 2.5 V | 200 MHz | 0.4 in | 66-TSSOP | 0.4 in | DRAM | 66-TSOP II | Surface Mount | 70 °C | 0 °C |