SCT4013DE Series

750V, 105A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET

Catalog

750V, 105A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max) [Min]	Vgs (Max) [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)
Rohm Semiconductor SCT4013DEC11	18 V	-4 V	21 V	312 W	170 nC	TO-247N	Through Hole	4580 pF	TO-247-3	175 °C	105 A	16.9 mOhm	N-Channel	4.8 V	750 V

Catalog

750V, 105A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET

Key Features

• Low on-resistance, Fast switching speed, Fast reverse recovery, Easy to parallel, Simple to drive, Pb-free lead plating ; RoHS compliant

Description

SCT4013DE is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.