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30V DUAL N-CHANNEL ENHANCEMENT M
| Part | Configuration | Current - Continuous Drain (Id) @ 25°C | Power - Max [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Package / Case | Package / Case [y] | Package / Case [x] | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Vgs(th) (Max) @ Id | Mounting Type | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Panjit International Inc. | 2 N-Channel (Dual) | 6 A | 2 W | -55 °C | 150 °C | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 5.1 nC | 8-SOP | 1.3 V | Surface Mount | 30 V | 35 mOhm | 421 pF |